THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor which enables to manufacture the thin film transistor employing a zinc oxide thin film as a semiconductor with high productivity at a low cost, and which ensures high field effect mobility in an obtained semiconductor, and to provide the thin film transistor. SOLUTION: The thin film transistor 26 is obtained by sequentially stacking on a substrate 28 a gate electrode 30, a gate insulating film 32, and an active semiconductor layer 34; and providing a source electrode 38 and a drain electrode 40 through contact layers 36, 36, respectively, for covering the opposite sides of the active semiconductor layer 34. The active semiconductor layer 34 is an n--type semiconductor consisting of the zinc oxide thin film which is formed by ion plating. COPYRIGHT: (C)2005,JPO&NCIPI