SILICON CARBIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device equipped with a J-FET wherein the leakage is suppressed between a source region and a second gate layer, and to provide its manufacturing method. SOLUTION: The silicon carbide semiconductor device comprises a semiconductor substrate 5 which consists of an n--type drift layer 2, a p+-type first gate layer 3, and an n+-type source region 4 formed on an SiC off substrate 1 in this order; an n--type channel layer 7 which is formed by epitaxial growth on the inner wall of a trench 6 formed in the semiconductor substrate 5; and the p+-type second gate layer 8 formed on the n--type channel layer 7. When manufacturing this device, either of the following methods is conducted: (1) The n+-type source region 4 is formed by ion implantation in a region different from a facet plane growth region 10. (2) After forming the n--type channel layer 7, the facet plane growth region 10 is removed by polishing or the like. (3) The n--type channel layer 7 is formed only on the inner wall of the trench 6 by selective epitaxial growth. COPYRIGHT: (C)2005,JPO&NCIPI