| 摘要 |
PROBLEM TO BE SOLVED: To provide an MIS transistor constituted of metal-insulator-semiconductor structure having performance superior in both structure and property, and to provide its manufacturing method. SOLUTION: The manufacturing method contains a first process for forming a source/drain 14 after dummy gates 11, 12 are formed on a semiconductor substrate 10, a second process for depositing an interlayer insulating film 15 on the substrate 10 and eliminating the dummy gates 11, 12, a third process for forming a side wall insulating film 17 on the side wall of the aperture 16 of the interlayer insulating film 15 in which the dummy gates 11, 12 are eliminated, a forth process for forming a gate insulated film 18 on the substrate 10 which is positioned on an internal side surface of the side wall insulating film 15 and a bottom of the aperture 16, and a fifth process for forming a gate electrode 20 in the aperture 16 where the side wall insulating film 17 and the gate insulated film 18 are formed. By structure wherein the side wall insulating film 17 is formed on the gate electrode 20, the MIS transistor can be realized in which electric field concentration of the side end of the gate insulated film 18 is reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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