| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which is equipped with a light emitting layer formed of compound semiconductor containing Al and realized through a simple manufacturing method, and to provide an optical module using the same and a functionally-coupled laser. SOLUTION: The semiconductor laser is equipped with, at least, a light emitting layer 205 which is formed on a p-type InP semiconductor substrate 201, contains InGaAlAs, and has a multiple quantum well structure and a periodic diffraction grating 211 which functions in a travelling direction of light to distributively reflect light impinging on a semiconductor layer 209 arranged near to the light emitting layer 205. The periodic diffraction grating 211 is formed of a multiple quantum well structure 209 which contains InGaAsP material having optical gains on the oscillation wavelength of a laser and serves as a gain diffraction grating whose refractive index and optical gain are periodically perturbed. COPYRIGHT: (C)2005,JPO&NCIPI
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