发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated device having an external wiring on the device side, which can improve corrosion resistance of the external wiring. SOLUTION: The above problem can be solved by the method of manufacturing a semiconductor integrated device. The method includes an external wiring forming process S16-1 for patterning a metal film formed on the side face of a laminate using a resist to form the external wiring, a resist releasing process S16-2 for removing the resist with a releasing agent, and a releasing agent cleaning process S16-3 for dipping the laminate in pure water stored in a washing tank to wash the releasing agent with water and for repeating washing until the resistance value of the pure water stored in the washing tank becomes 16 MΩor more. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004311572(A) 申请公布日期 2004.11.04
申请号 JP20030100318 申请日期 2003.04.03
申请人 SANYO ELECTRIC CO LTD 发明人 IMAI KENJI;KUBOTA TETSUYA;MIWA TETSUYA;KITAMURA YUYA
分类号 H01L21/027;H01L21/02;H01L21/304;(IPC1-7):H01L21/02 主分类号 H01L21/027
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