发明名称 SPUTTERING CATHODE AND SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a sputtering cathode and a sputtering apparatus capable of suppressing the cost for working a target, unifying the film thickness distribution similarly to a known method without increasing the size of the apparatus, and in addition, increasing the film deposition speed. SOLUTION: The sputtering cathode has a freely tiltable target with respect to a substrate to be treated. In addition, the sputtering cathode is freely controlled with respect to the distance from the substrate to the target by moving the target. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004307882(A) 申请公布日期 2004.11.04
申请号 JP20030099616 申请日期 2003.04.02
申请人 ULVAC JAPAN LTD 发明人 SUZUKI YASUMASA;ISAGOZAWA YASUTOSHI;HORIUCHI TAKASHI
分类号 C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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