| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an antireflection film for lithography having a high antireflection effect, causing no intermixing with a photoresist, having a high dry etching rate compared to the photoresist and giving a wide focus depth margin. <P>SOLUTION: The composition for the formation of an antireflection film contains a polymer having a polycyclic alicyclic structure and a crosslinking agent, and is used for lithographic processes for the manufacture of a semiconductor device. The polymer has the polycyclic alicyclic structure introduced into the side chain coupled to the main chain. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
