| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein an exposure process is reduced in throughput to deteriorate productivity markedly when a dummy pattern is formed outside an effective shot on a wafer so as to prevent polishing variations and pattern-dependent properties from occurring when a substrate is polished. SOLUTION: An annular mask is formed on the circumferential part of the wafer. A region is formed on the circumference of the wafer by the use of the above annular mask, where no wiring structure is formed and which is as high as the top surface of an insulating film formed on the substrate in another region where wiring structures, such as a damascene interconnect line, contact holes and the like, are formed. The annular mask is formed through a manner wherein a positive resist is polymerized or resin is selectively applied. COPYRIGHT: (C)2005,JPO&NCIPI
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