发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide technology for omitting a process for setting a mode register again at the time of power-up of a system by setting the mode register utilizing especially a nonvolatile ferroelectric register, with respect to a semiconductor memory device. SOLUTION: By attaining a register about mode reset by a nonvolatile ferroelectric capacitor, the same function as SDR (signal Data Rate), SDRAM (Synchronous Dynamic Random Access Memory), or DDR (Double Data Rate) can be attained at the time of applying it to the nonvolatile capacitor memory. Therefore, even when a power source is turned off, data stored in the mode register can be kept, and the effect for keeping compatibility with DRAM is provided. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004311002(A) 申请公布日期 2004.11.04
申请号 JP20040051795 申请日期 2004.02.26
申请人 HYNIX SEMICONDUCTOR INC 发明人 KANG HEE BOK
分类号 G11C7/20;G11C11/22;G11C11/407;G11C11/408;G11C11/409;(IPC1-7):G11C11/22 主分类号 G11C7/20
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