| 发明名称 |
METHOD TO PLANARIZE AND REDUCE DEFECT DENSITY OF SILICON GERMANIUM |
| 摘要 |
A method for blanket depositing a SiGe film (30) comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate (10) under chemical vapor deposition conditions to deposit a blanket layer of epitaxial SiGe (30) onto the substrate (10), whether patterned or un-patterned. |
| 申请公布号 |
WO2004081986(A3) |
申请公布日期 |
2004.11.04 |
| 申请号 |
WO2004US07385 |
申请日期 |
2004.03.11 |
| 申请人 |
ASM AMERICA INC.;TOMASINI, PIERRE;CODY, NYLES;ARENA, CHANTAL |
发明人 |
TOMASINI, PIERRE;CODY, NYLES;ARENA, CHANTAL |
| 分类号 |
C30B25/02;C30B29/52;H01L21/20;H01L21/205;H01L21/36 |
主分类号 |
C30B25/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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