TAILORING NITROGEN PROFILE IN SILICON OXYNITRIDE USING RAPID THERMAL ANNEALING WITH AMMONIA UNDER ULTRA-LOW PRESSURE

摘要

A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.