发明名称 |
FLASH MEMORY DEVICE WITH ERROR CORRECTION FUNCTION |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory for preventing transcription of an erroneous bit of source data after copy back. <P>SOLUTION: In order to prevent transcription of a unique bit error, this NAND type flash memory is equipped with: a circuit which corrects the bit error of the source data of a specific page which is stored in a page buffer; a means which supplies the source data to the above circuit and provides the correction data corrected by the circuit to the page buffer; and a means which copies the source data to the page buffer and stores the corrected data into another page from the page buffer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004311010(A) |
申请公布日期 |
2004.11.04 |
申请号 |
JP20040095529 |
申请日期 |
2004.03.29 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE JIN-YUB |
分类号 |
G06F12/16;G06F12/06;G11C16/02;G11C16/04;G11C16/06;G11C16/10;G11C16/26;G11C29/42 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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