| 摘要 |
PROBLEM TO BE SOLVED: To realize a stable drain current and a sufficient reduction effect for a gate leakage current by using a gate insulation film having a thickness less than 10nm with which a high gain is acquired, in a GaN HFET. SOLUTION: A semiconductor device comprises an Si<SB>3</SB>N<SB>4</SB>film 41A provided on a surface of an HFET structure 10 using a nitride semiconductor, an Al<SB>2</SB>O<SB>3</SB>film 41B formed on the Si<SB>3</SB>N<SB>4</SB>film 41A, and a gate electrode 42 formed on the Al<SB>2</SB>O<SB>3</SB>film 41B. By this structure, the stable drain current and the sufficient reduction effect for the gate leakage current are realized by using the gate insulation film having the thickness less than 10nm with which the high gain is acquired. As a result, an insulation gate HFET of high gain/ large current using a thin layer insulation gate 40 is realized. COPYRIGHT: (C)2005,JPO&NCIPI |
