发明名称 ODT CIRCUIT AND ODT METHOD FOR MINIMIZING ON-CHIP DC CURRENT CONSUMPTION, AND MEMORY SYSTEM ADOPTING MEMORY DEVICE PROVIDED THEREWITH
摘要 PROBLEM TO BE SOLVED: To provide an ODT (On-Die Termination) circuit and ODT method of a memory device for minimizing on-chip DC current consumption and a memory system provided with the memory device. SOLUTION: A termination voltage port for receiving a termination voltage, a data input-output port, a first terminating resistance one end of which is connected to the data input-output port, and a switch for selectively connecting the termination voltage port and the other end of the first terminating resistance in response to a termination enable signal constitute the ODT circuit of a synchronous memory device. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004310981(A) 申请公布日期 2004.11.04
申请号 JP20030390227 申请日期 2003.11.20
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RI TEIBAI
分类号 G11C11/409;G11C7/10;G11C11/40;(IPC1-7):G11C11/409 主分类号 G11C11/409
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