发明名称 |
ODT CIRCUIT AND ODT METHOD FOR MINIMIZING ON-CHIP DC CURRENT CONSUMPTION, AND MEMORY SYSTEM ADOPTING MEMORY DEVICE PROVIDED THEREWITH |
摘要 |
PROBLEM TO BE SOLVED: To provide an ODT (On-Die Termination) circuit and ODT method of a memory device for minimizing on-chip DC current consumption and a memory system provided with the memory device. SOLUTION: A termination voltage port for receiving a termination voltage, a data input-output port, a first terminating resistance one end of which is connected to the data input-output port, and a switch for selectively connecting the termination voltage port and the other end of the first terminating resistance in response to a termination enable signal constitute the ODT circuit of a synchronous memory device. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004310981(A) |
申请公布日期 |
2004.11.04 |
申请号 |
JP20030390227 |
申请日期 |
2003.11.20 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
RI TEIBAI |
分类号 |
G11C11/409;G11C7/10;G11C11/40;(IPC1-7):G11C11/409 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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