| 摘要 |
Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R<1>)4N]+[R<2>X]<-> (1) Hk[(R<1>)4N]m<+>Y<-> (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C-CO2, NO3 or NO2; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=O and m=2, or k=1 and m=1.
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