<p>There is provided a 2-stage laser device appropriately used for a semiconductor exposure device having a high stability , a high output efficiency, and a narrow line width of the MOPO method and a low spatial coherence. The 2-stage laser device for exposure includes an oscillation stage laser (50) and an amplification stage laser (60). The oscillation stage laser (50) oscillates a laser beam having divergence. The amplification stage laser (60) includes a Fabry-Perot etalon resonator consisting of an input side mirror (1) and an output side mirror (2) and the resonator constitutes a stable resonator.</p>
