SEMICONDUCTOR MEMORY DEVICE PREVENTING LEANING AND LIFTING OF LOWER ELECTRODE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor memory device and a method for manufacturing the same are provided to prevent leaning and lifting of a lower electrode by using an improved lower electrode pattern. CONSTITUTION: A plurality of plugs(58) are formed on a semiconductor substrate(50). A plurality of lower electrodes of a capacitor are formed to contact the plugs. At this time, a first lower electrode pattern(62c) of cup or cylindrical shape is formed at a center region of a cell matrix, and a second lower electrode pattern(62b) of stack or box shape is formed at edge regions of the cell matrix.