发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To realize a method of manufacturing a semiconductor device which is capable of improving both the reliability of the semiconductor device and the yield of an assembly process. <P>SOLUTION: The one ends of a first clip 30 and a second clip 31 are placed on low-melting solders 23c and 23d of a second lead terminal 14 and a third terminal 15, respectively, and the other ends of the clips 30 and 31 are placed on the low-melting solders 23a and 23b of a source electrode 21 and a gate electrode 22, respectively. Then, without moving a frame 10, both the ends of the clips 30 and 31 are irradiated with a laser beam at the mounting spot to melt the low-melting solders 23a, 23b, 23c, and 23d, whereby the clips 30 and 31, the lead terminals 14 and 15, and the electrodes 21 and 22 are fixed together by alloying them. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004311539(A) 申请公布日期 2004.11.04
申请号 JP20030099846 申请日期 2003.04.03
申请人 TOSHIBA CORP 发明人 NANBA MASATAKA
分类号 H01L21/60 主分类号 H01L21/60
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