| 发明名称 |
METHOD FOR FORMING INSULATING FILM, METHOD FOR MANUFACTURING TRANSISTOR, ELECTRO-OPTICAL DEVICE, INTEGRATED CIRCUIT AND ELECTRONIC APPARATUS |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a high quality silicon oxide film at low temperature. <P>SOLUTION: An insulating film is configured in a laminate structure of an ozone oxide film and an applied insulating film. The ozone oxide film is heats the substrate up to 200 to 500°C, radiates light to a space where the substrate is arranged, and generates oxygen radical on the substrate. The oxygen radical makes it possible to oxidize the silicon of the surface of the substrate so that a silicon oxide film can be formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
| 申请公布号 |
JP2004311827(A) |
申请公布日期 |
2004.11.04 |
| 申请号 |
JP20030105351 |
申请日期 |
2003.04.09 |
| 申请人 |
SEIKO EPSON CORP |
发明人 |
YUDASAKA KAZUO |
| 分类号 |
G02F1/1333;G02F1/1368;H01L21/316;H01L21/318;H01L21/336;H01L29/786;H01L51/50;H05B33/10;H05B33/14;(IPC1-7):H01L21/318;G02F1/136;G02F1/133 |
主分类号 |
G02F1/1333 |
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