| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which enables a semiconductor substrate to be reduced in area by utilizing the parasitic capacitance in the semiconductor region where a memory cell array is formed as a stabilizing capacitor used for controlling and making the output potential of a step-up circuit constant. <P>SOLUTION: The semiconductor memory device is composed of a p-type semiconductor substrate 19; a step-up potential control unit 11 which is formed on the p-type semiconductor substrate 19, steps up a potential supplied from outside, and outputs a stepped-up potential; an n-type well region 20 which is formed on the semiconductor substrate 19 and where the stepped-up potential is applied from the step-up potential control unit 11; a p-type well region 21 formed on the n-type well region 20; and a memory cell MC formed on the p-type well region 21. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
