发明名称 SUBSTRATE PROCESSING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To elevate/lower the temperature in the processing chamber of substrate processing equipment efficiently. SOLUTION: In an oxidation or diffusion unit 10 equipped with a heater unit 30 for heating a processing chamber 12, the heater unit 30 is provided with a thermal insulation tub 33 consisting of a first reflector 34 disposed on the outside of the processing chamber 12, and a second reflector 35 disposed on the outside of the first reflector 34 through a space 36 wherein the thermal insulation tub 33 is connected with a pipe 38 for exhausting the space 36 and a pipe 37 for supplying gas into the space. Since thermal energy being consumed in the thermal insulation tub can be suppressed and a high temperature elevating/lowering rate can be set by setting a low thermal capacity for the first and second reflectors, temperature in the processing chamber can be elevated/lowered efficiently. Consequently, total processing time can be shortened and energy saving can be realized. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004311648(A) 申请公布日期 2004.11.04
申请号 JP20030102011 申请日期 2003.04.04
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SHIMADA SHINICHI;MIYATA TOSHIMITSU;TSUKAMOTO HIDEYUKI;OGAWA TOMOKAZU;OKA TAKENORI
分类号 H01L21/22;H01L21/31;H01L21/324;(IPC1-7):H01L21/31 主分类号 H01L21/22
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