| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for measuring a silicon surface capable of performing measurement in a short time. SOLUTION: In the method for measuring the structure of the silicon surface, soft X-rays are made incident onto a wafer surface under condition of total reflection, and intervals between peaks in the intensity of diffraction (especially the interval between a maximum peak and the following peak) are measured to identify a step width. The wavelength of the soft X-rays is between 1-10<SP>-1</SP>mm. Objects to be measured are silicon wafers formed by epitaxial growth and wafers formed by high-temperature annealing treatments. COPYRIGHT: (C)2005,JPO&NCIPI
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