| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor substrate processing technology capable of improving the performance of a solid immersion lens in the case of processing the semiconductor substrate and forming the solid immersion lens on the surface of the semiconductor substrate. SOLUTION: The semiconductor substrate 1 is irradiated with focused ion beams 5 to form a convex part 2 acting as a solid immersion lens on a main surface 3a. The shaved quantity of the semiconductor substrate 1 due to the focused ion beams 5 is controlled by changing the irradiation time of the focused ion beams 5 to the semiconductor substrate 1. Consequently, the surface of the convex part 2 becomes an accurate curved surface, and the performance of the convex part 2 as the solid immersion lens can be improved. COPYRIGHT: (C)2005,JPO&NCIPI
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