| 摘要 |
The present invention is directed to a semiconductor memory device and method of operating the same. In case where fail normal word lines of normal word lines from a normal memory block to which fail memory cells are connected is substituted by redundant word lines of a redundant memory block, the redundant word lines to replace the fail normal word lines are set in the redundant memory block. If the fail normal word lines are selected when the device is operated, the fail normal word lines and the redundant word lines are activated at the same time to increase capacitance of a capacitor connected to the sense amplifier. Therefore, it is possible to increase the exactness of a read operation or a refresh operation and improve reliability of a device operation, by increasing a comparable margin of the sense amplifier.
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