发明名称 |
Copper dual damascene interconnect technology |
摘要 |
A process and structure for copper damascene interconnects including a tungsten-nitride (WN2) barrier layer formed by atomic layer deposition is disclosed. The process method includes of forming a copper damascene structure by forming a first opening through a first insulating layer. A second opening is formed through a second insulating layer which is provided over the first insulating layer. The first opening being in communication with the second opening. A tungsten-nitride (WN2) layer is formed in contact with the first and second openings. And, a copper layer is provided in the first and second openings. Copper is selectively deposited using a selective electroless deposition technique at low temperature to provide improved interconnects having lower electrical resistivity and more electro/stress-migration resistance than conventional interconnects. Additionally, metal adhesion to the underlying substrate materials is improved and the amount of associated waste disposal problems is reduced.
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申请公布号 |
US2004219783(A1) |
申请公布日期 |
2004.11.04 |
申请号 |
US20040853490 |
申请日期 |
2004.05.25 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
C23C18/16;C23C18/20;C23C18/38;H01L21/311;H01L21/321;H01L21/44;H01L21/4763;H01L21/768;H01L23/48;(IPC1-7):H01L21/476 |
主分类号 |
C23C18/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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