发明名称 METHOD FOR PREPARING A DEVICE STRUCTURE HAVING A WAFER STRUCTURE DEPOSITED ON A COMPOSITE SUBSTRATE HAVING A MATCHED COEFFICIENT OF THERMAL EXPANSION
摘要 <p>A wafer structure is deposited on a composite substrate structure having at least two substrate layers bonded together. A first substrate layer is made of a first substrate material having a first-substrate-layer material transverse coefficient of thermal expansion, greater than the wafer transverse coefficient of thermal expansion, and a second substrate layer is made of a second substrate material having a second-substrate-layer material transverse coefficient of thermal expansion, measured parallel to the transverse direction, less than the wafer transverse coefficient of thermal expansion. The substrate layers are present in relative proportions such that the substrate transverse coefficient of thermal expansion differs from the wafer transverse coefficient of thermal expansion by not more than about 2 x 10<-6>/°F.</p>
申请公布号 WO2004095554(A2) 申请公布日期 2004.11.04
申请号 WO2004US11712 申请日期 2004.04.16
申请人 RAYTHEON COMPANY 发明人 PETERSON, JEFFREY, M.
分类号 H01L21/20;H01L21/762;(IPC1-7):H01L21/20;H01L21/36 主分类号 H01L21/20
代理机构 代理人
主权项
地址