SEMICONDUCTOR LASER DEVICE

摘要

There is provided a semiconductor laser device (1) including a semiconductor laser element (3) having an active region composed of an AlGaAs-based crystal, an AlGaInP-based crystal, an AlGaN-based crystal, or an InGaN-based crystal in a package (2) gas-tightly sealed. The atmosphere gas in the package (2) is a gas containing oxygen. The semiconductor laser element (3) has a dielectric oxide film on the laser emission surface. The atmosphere gas is a mixture of oxygen and nitrogen and the content of oxygen is set to 20% or above.