| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to reduce etch damage of a trench by using two isolation masks. CONSTITUTION: A buffer oxide layer and a pad nitride layer are sequentially formed on a substrate. A first trench is formed by etching the substrate corresponding to a portion with narrow width between adjacent active regions using a first isolation mask. A second trench is formed by etching the substrate corresponding to a portion with wide width between adjacent active regions using a second isolation mask(3). A trench isolation layer is then formed by filling an insulating layer in the trenches.
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