METHOD FOR GENERATING OVERLAY MEASUREMENT PATTERN USED FOR ACCURATE INSPECTION FOR SEMICONDUCTOR ELEMENT

摘要

PURPOSE: A method for generating an overlay measurement pattern for a semiconductor element is provided to prevent deformation of an inner box due to a non-uniformity of polishing. CONSTITUTION: A method for generating an overlay measurement pattern prevents erroneous overlay measurement due to a change of a shape of an inner box(58) formed on an outer box(56) caused by non-uniform polishing during a CMP(Chemical Mechanical Polishing) operation. The inner box is formed in the outer box using a photoresist pattern. End portions of one and the other sides and end portions of upper and lower sides match each of the edges of the outer box in a cross formation. A center of a rectangular where no pattern is provided is formed to be surrounded by patterns. The inner box is formed by using a reticle whose center is not processed with chromium while a peripheral thereof is processed with chromium.