| 摘要 |
PURPOSE: A semiconductor device for performing bridge rectification of a power line is provided to reduce the cost for preventing short circuit of a switching device of a high potential side by installing a voltage detection element at a low potential part to detect main potential of a high potential side. CONSTITUTION: A plurality of power devices(12,13) such as IGBTs(Integrated Gate Bipolar Transistors) are totem-pole-connected between a high side power line and a low side power line, in order to form a half-bridge power device. A plurality of free wheel diodes(D1,D2) are connected inversely in parallel to the power devices, respectively. A load is connected to a node(N1) between the power devices. The power device(12) switches between the potential at the node used as the reference potential and the potential at a high side power line. The power device(13) switches between the ground potential used as the reference potential and the potential at the node.
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