METHOD OF MANUFACTURING CONTAMINATION-REDUCED SEMICONDUCTOR DEVICE AND FILM FORMING METHOD

摘要

PURPOSE: A method of manufacturing a semiconductor device and a film forming method are provided to prevent by-products from being generated in a film forming chamber after a gas cleaning process by forming a second thin film on an inner wall of the film forming chamber. CONSTITUTION: A first thin film is formed on a semiconductor substrate(W) at a first temperature in a film forming chamber. An accretion is removed from an inner wall of the film forming chamber by using plasma containing halogen-based gas at a second temperature. The second temperature is lower than the first temperature. A cleaning process is performed in the film forming chamber while the temperature of the film forming chamber approaches the first temperature. At this time, a second thin film is formed on the inner wall of the film forming chamber.