| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to restrain the abnormality of a mesa structure without the restrictions on a pattern layout or the type of an etching solution by simplifying the structure of a conductive layer. CONSTITUTION: A semiconductor device includes a semiconductor mesa structure, a base contact pad mesa structure and a conductive layer. The semiconductor mesa structure(EM,BM,SM) includes a stacked structure formed on a substrate(10), wherein the stacked structure is composed of a collector layer(12), a base layer(13) and an emitter layer(14). The base contact pad mesa structure(PBM,PSM) with the same height as an upper surface of the base layer is spaced apart from the semiconductor mesa structure on the substrate. The conductive layer(17) includes a base electrode(17a) connected with the base layer, a base contact pad electrode(17b) on the base contact pad mesa structure, and a metal line part(17c) between the base electrode and the base contact pad electrode.
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