发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR GENERATING WRITE PATTERN OF THE SAME, ESPECIALLY REDUCING THE NUMBER OF MRS CODE |
摘要 |
PURPOSE: A semiconductor memory device and a method for generating a write pattern of the same are provided to generate various write pattern data using a small number of MRS codes during a parallel bit test. CONSTITUTION: A mode set register(30) sets states of a parallel bit test signal and a plurality of signals in response to a MRS code applied from the external in response to a mode set command. A data input circuit generates at least one bit data applied from the external in response to a write command. And a write pattern data generation circuit(32) generates write pattern data by mixing the parallel bit test signal and the plurality of signals in response to the one bit data from the data input circuit.
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申请公布号 |
KR20040092260(A) |
申请公布日期 |
2004.11.03 |
申请号 |
KR20030026507 |
申请日期 |
2003.04.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHAE, MU SEONG;LEE, JAE UNG |
分类号 |
G11C7/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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