发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
A semiconductor device (100) according to the present invention comprises a vertical PNP bipolar transistor (20), an NMOS transistor (50) and a PMOS transistor (60) which are of high dielectric strength, and a P-type semiconductor substrate 1, as shown in FIG. 2. A substrate isolation layer (21) of the PNP bipolar transistor (20), a drain buried layer (51) of the NMOS transistor (50), and a back gate buried layer (61) of the PMOS transistor (60) are formed simultaneously by selectively implanting N-type impurities such as phosphorous in the semiconductor substrate (1). This invention greatly contributes curtailing the processes of fabricating BiCMOS ICs and the like including vertical bipolar transistors with easily controllable performance characteristics such as a current amplification factor and MOS transistors with high dielectric strength and makes even more miniaturization of such ICs achievable. <IMAGE>
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申请公布号 |
EP1473774(A1) |
申请公布日期 |
2004.11.03 |
申请号 |
EP20030737467 |
申请日期 |
2003.02.03 |
申请人 |
SONY CORPORATION |
发明人 |
OOKUBO, KENICHI;MORI, HIDEKI;KANEMATSU, SHIGERU |
分类号 |
H01L21/8249;H01L21/8222;H01L21/8228;H01L21/8248;H01L27/06;H01L27/082;H01L27/092;H01L31/119;(IPC1-7):H01L27/06 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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