发明名称 |
Semiconductor device with copper wirings |
摘要 |
A semiconductor device with p-channel MOS transistor having: a gate insulating film (13) of nitrogen-containing silicon oxide; a gate electrode (14) of boron-containing silicon; side wall spacers on side walls of the gate electrode, comprising silicon oxide; an interlayer insulating film (21) having a planarized surface; a wiring trench and a contact via hole formed in the interlayer insulating film; a copper wiring pattern (27) including an underlying barrier layer (26) and an upper level copper region, and filled in the wiring trench; and a silicon carbide layer (29) covering the copper wiring pattern. A semiconductor device has the transistor structure capable of suppressing NBTI deterioration. |
申请公布号 |
EP1349207(A3) |
申请公布日期 |
2004.11.03 |
申请号 |
EP20020022622 |
申请日期 |
2002.10.09 |
申请人 |
FUJITSU LIMITED |
发明人 |
KAKAMU, KATSUMI;TAKAO, YOSHIHIRO |
分类号 |
H01L21/28;H01L21/768;H01L21/8234;H01L23/532;H01L27/088;H01L29/78;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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