| 发明名称 |
Semiconductor wafer with ultra thin doping level formed by defect engineering |
| 摘要 |
Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.
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| 申请公布号 |
US6812523(B1) |
申请公布日期 |
2004.11.02 |
| 申请号 |
US20020237417 |
申请日期 |
2002.09.09 |
| 申请人 |
CHU WEI-KAN |
发明人 |
CHU WEI-KAN;SHAO LIN;LU XINMING;LIU JIARUI;WANG XUEMEI |
| 分类号 |
H01L21/225;H01L21/265;H01L29/34;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/225 |
| 代理机构 |
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代理人 |
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