Fabrication method of semiconductor device

摘要

The present invention comprises the steps of forming a connection hole in an interlayer insulating film including an organic insulating film; forming an inorganic film covering on an upper surface of the interlayer insulating film and an inner surface of the connection hole; forming an organic film for filling inside the connection hole on an inorganic film; removing the organic film inside the connection hole so as to leave a part of the organic film at a bottom of the connection hole; forming a wiring trench connecting to the connection hole in the interlayer insulating film; removing the organic film inside the connection hole; removing the inorganic film; and forming a trench wiring by filling a conductive material in the wiring trench and inside the connection hole and forming a plug continuing from the trench wiring.