| 摘要 |
In forming linear circuit patterns running in vertical and horizontal directions, phases are arranged such that phases between proximate opening patterns are reversed. Type A phase conflict patterns have the same phase and are proximate to each other. Type B phase conflict patterns have reverse phases and are brought into contact with each other. Patterns for resolving the phase conflicts are generated, and a phase mask having a conflict resolving pattern and a complementary phase mask for forming a design pattern complementary therewith are subjected to multiple exposures on a substrate. Circuit patterns having a very small pitch which have been regarded to be difficult to manufacture can be manufactured by the multiple exposure of at most two sheets of the phase-shifting masks and a semiconductor integrated circuit device can be manufactured at low cost by designing the circuit patterns in a short period of time. |
