发明名称 MAGNETIC RANDOM ACCESS MEMORY INCLUDING REPAIR OPERATION FOR DETECTIVE CELL IN A ROW UNIT
摘要 PURPOSE: A magnetic random access memory is provided to enable a write operation in multiple input/output method and a defective cell redundancy operation in a row unit. CONSTITUTION: A digit line(130) is prolonged horizontally on a substrate, and a bit line(120) is prolonged vertically on the substrate. A magnetic memory cell(110) has a magnetic free layer whose long axis(a) is arranged horizontally and short axis(b) is arranged vertically on a cross space between the digit line and the bit line. The magnetic memory cell comprises a magnetic pinned layer which is arranged on the digit line and its magnetization direction is pinned along one direction, and a tunneling insulator arranged on the magnetic pinned layer, and the magnetic free layer arranged on the tunneling insulator and connected to the bit line electrically.
申请公布号 KR20040091834(A) 申请公布日期 2004.11.02
申请号 KR20030025424 申请日期 2003.04.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, U YEONG;KIM, SU YEON;OH, HYEONG ROK
分类号 G11C11/15;(IPC1-7):G11C11/15 主分类号 G11C11/15
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