发明名称 |
MAGNETIC RANDOM ACCESS MEMORY INCLUDING REPAIR OPERATION FOR DETECTIVE CELL IN A ROW UNIT |
摘要 |
PURPOSE: A magnetic random access memory is provided to enable a write operation in multiple input/output method and a defective cell redundancy operation in a row unit. CONSTITUTION: A digit line(130) is prolonged horizontally on a substrate, and a bit line(120) is prolonged vertically on the substrate. A magnetic memory cell(110) has a magnetic free layer whose long axis(a) is arranged horizontally and short axis(b) is arranged vertically on a cross space between the digit line and the bit line. The magnetic memory cell comprises a magnetic pinned layer which is arranged on the digit line and its magnetization direction is pinned along one direction, and a tunneling insulator arranged on the magnetic pinned layer, and the magnetic free layer arranged on the tunneling insulator and connected to the bit line electrically.
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申请公布号 |
KR20040091834(A) |
申请公布日期 |
2004.11.02 |
申请号 |
KR20030025424 |
申请日期 |
2003.04.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, U YEONG;KIM, SU YEON;OH, HYEONG ROK |
分类号 |
G11C11/15;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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