| 摘要 |
A non-volatile memory device, such as a Programmable Conductor Random Access Memory (PCRAM) device, having an exemplary memory stored state retention characteristic is disclosed. There is provided a method for retaining stored states in a random access memory device generally comprising the steps of programming a memory cell or an array of memory cells by applying a first voltage to the cells and stabilizing the cells by applying a second voltage to the cells, which is less than the first voltage. The second voltage, which acts as a stabilizing voltage, may be a read-out voltage. The second voltage may also be continuously applied to the cells. The second voltage may also be provided as a sweep voltage, a pulse voltage, or a step voltage.
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