发明名称 |
Semiconductor memory device and method for testing semiconductor memory device |
摘要 |
A semiconductor memory device for easily and accurately evaluating a device. The memory device has a first access mode and a second access mode. The memory device includes an entry signal generation circuit to synthesize input signals and generate a first entry signal used to enter the first access mode. A control circuit generates a first mode trigger signal in response to the first entry signal. The control circuit also receives a second entry signal used to enter the second access mode and generates a second mode trigger signal in response to the second entry signal. The entry signal generation circuit logically synthesizes the input signals in a selective manner in accordance with a selection control signal to generate the first entry signal.
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申请公布号 |
US6813203(B2) |
申请公布日期 |
2004.11.02 |
申请号 |
US20030632899 |
申请日期 |
2003.08.04 |
申请人 |
FUJITSU LIMITED |
发明人 |
NAKAGAWA YUJI |
分类号 |
G01R31/28;G01R31/3183;G01R31/3185;G11C7/00;G11C11/401;G11C11/406;G11C29/08;G11C29/46;(IPC1-7):G11C29/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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