发明名称 Semiconductor memory device and method for testing semiconductor memory device
摘要 A semiconductor memory device for easily and accurately evaluating a device. The memory device has a first access mode and a second access mode. The memory device includes an entry signal generation circuit to synthesize input signals and generate a first entry signal used to enter the first access mode. A control circuit generates a first mode trigger signal in response to the first entry signal. The control circuit also receives a second entry signal used to enter the second access mode and generates a second mode trigger signal in response to the second entry signal. The entry signal generation circuit logically synthesizes the input signals in a selective manner in accordance with a selection control signal to generate the first entry signal.
申请公布号 US6813203(B2) 申请公布日期 2004.11.02
申请号 US20030632899 申请日期 2003.08.04
申请人 FUJITSU LIMITED 发明人 NAKAGAWA YUJI
分类号 G01R31/28;G01R31/3183;G01R31/3185;G11C7/00;G11C11/401;G11C11/406;G11C29/08;G11C29/46;(IPC1-7):G11C29/00 主分类号 G01R31/28
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