| 发明名称 |
Trench capacitor memory cell |
| 摘要 |
An improved sub 8F<2 >memory cell is disclosed. The sub 8F<2 >cell includes a shallow transistor trench in which a buried portion of the transistor occupies.
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| 申请公布号 |
US6812091(B1) |
申请公布日期 |
2004.11.02 |
| 申请号 |
US20000669585 |
申请日期 |
2000.09.26 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GRUENING ULRIKE;ALSMEIER JOHANN |
| 分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L21/20 |
主分类号 |
H01L21/8242 |
| 代理机构 |
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