发明名称 |
Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance |
摘要 |
A method for making a SOI wafer with a strained silicon layer for increased electron and hole mobility is achieved. The method forms a porous silicon layer on a seed wafer. A H2 anneal is used to form a smooth surface on the porous silicon. A strain free (relaxed) epitaxial SixGe1-x layer is deposited and a bonding layer is formed. The seed wafer is then bonded to a handle wafer having an insulator on the surface. A spray etch is used to etch the porous Si layer resulting in a SOI handle wafer having portions of the porous Si layer on the relaxed SixGe1-x. The handle wafer is then annealed in H2 to convert the porous Si to a smooth strained Si layer on the relaxed SiGe layer of the SOI wafer.
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申请公布号 |
US6812116(B2) |
申请公布日期 |
2004.11.02 |
申请号 |
US20020318454 |
申请日期 |
2002.12.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG CHIEN-CHAO;YEO YEE-CHIA;YANG KUO-NAN;LIN CHUN-CHIEH;HU CHENMING |
分类号 |
H01L21/20;H01L21/324;H01L21/762;H01L29/10;(IPC1-7):H01L21/301;H01L21/46;H01L21/78 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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