发明名称 Semiconductor substrate and method for fabricating the same
摘要 A semiconductor substrate device comprises a first semiconductor substrate including a concave-convex surface and a second semiconductor substrate having an insulating film on a surface thereof. The first semiconductor substrate and the second semiconductor substrate are brought together so that the surface of the first semiconductor substrate and the insulating film provided on the surface of the second semiconductor substrate contact each other to form a cavity in the semiconductor substrate device.
申请公布号 US6812508(B2) 申请公布日期 2004.11.02
申请号 US20010993897 申请日期 2001.11.27
申请人 SHARP KABUSHIKI KAISHA 发明人 FUKUMI MASAYUKI
分类号 H01L27/12;H01L21/02;H01L21/764;(IPC1-7):H01L27/148;H01L29/768 主分类号 H01L27/12
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