Method for improving adhesion between dielectric material layers

摘要

This invention provides a method to improve the adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device. The first step is to form a SiC-based dielectric material layer over a substrate. The SiC-based dielectric material layer is treated by oxygen plasma. A second layer of dielectric material is formed over the SiC-based dielectric material layer.