| 摘要 |
A single crystal semiconductor region is fabricated in a semiconductor wafer. The region is either cantilevered, supported at one or both ends, or midpoint, or supported at multiple locations. After a pattern and etch step, a dielectric fill step is performed to define the boundaries of the region in the semiconductor wafer. Oxygen or nitrogen is implanted in the semiconductor wafer on a surface area of the semiconductor wafer that corresponds to a top surface of the region. The annealing of the oxygen or nitrogen ions convert the silicon to an oxide or a nitride beneath the surface area. The silicon dioxide or silicon nitride is etched away to produce a semiconducting region of a single crystal material.
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