发明名称 Method of producing pattern-formed structure and photomask used in the same
摘要 A method of producing a pattern-formed structure, comprising: preparing a substrate for a pattern-formed structure having a characteristic-modifiable layer whose characteristic at a surface thereof can be modified by the action of photocatalyst; preparing a photocatalyst-containing-layer side substrate having a photocatalyst-containing layer formed on a base material, the photocatalyst-containing layer containing photocatalyst, arranging the substrate for a pattern-formed structure and the photocatalyst-containing-Iayer side substrate such that the characteristic-modifiable layer faces the photocatalyst-containing layer with a clearance of no larger than 200 mum therebetween; and irradiating energy to the characteristic-modifiable layer from a predetermined direction, and modifying characteristic of a surface of the characteristic-modifiable layer, thereby forming a pattern at the characteristic-modifiable layer.
申请公布号 US6811945(B2) 申请公布日期 2004.11.02
申请号 US20030387753 申请日期 2003.03.13
申请人 DAI NIPPON PRINTING CO., LTD. 发明人 KOBAYASHI HIRONORI
分类号 B41C1/10;G03F1/00;G03F1/14;G03F7/00;G03F7/11;G03F7/20;(IPC1-7):G03F7/00 主分类号 B41C1/10
代理机构 代理人
主权项
地址