发明名称 Esrf source for ion plating epitaxial deposition
摘要 A method and system for growing a crystalline layer on a substrate. Using an electrically-shielded RF (ESRF) source, a plasma is created and directed to a substrate inside the ESRF source. The plasma arrives at the substrate surface with a high mobility and enables its constituents to form a highly regular structure on the substrates.
申请公布号 US6811611(B2) 申请公布日期 2004.11.02
申请号 US20020204002 申请日期 2002.08.16
申请人 TOKYO ELECTRON LIMITED 发明人 JOHNSON WAYNE L.
分类号 C23C14/32;C30B23/02;C30B25/10;(IPC1-7):C30B25/06 主分类号 C23C14/32
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