发明名称 |
Method for forming cathode contact areas for an electroplating process |
摘要 |
A method for forming electroplating cathode contacts around the periphery of a semiconductor wafer including forming an insulating layer over a conductive layer extending at least around the periphery of a semiconductor wafer substrate; etching a plurality of openings around a peripheral portion of the semiconductor wafer substrate through the insulating layer to extend through a thickness of the insulating layer in closed communication with the conductive layer said conductive area in electrical communication with a central portion of the semiconductor wafer substrate; filling the plurality of openings with metal to form electrically conductive pathways; planarizing the electrically conductive pathway surfaces; and, forming a metal layer over the electrically conductive pathway surfaces to form a plurality of contact pads for contacting a cathode for carrying out an electroplating process.
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申请公布号 |
US6811670(B2) |
申请公布日期 |
2004.11.02 |
申请号 |
US20010002544 |
申请日期 |
2001.11.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
LIU CHUNG-SHI;YU CHEN-HUA |
分类号 |
C25D7/12;H01L21/288;H01L21/768;(IPC1-7):C25D7/12;H01L21/445 |
主分类号 |
C25D7/12 |
代理机构 |
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