Static semiconductor memory device

摘要

An SRAM comprises a memory cell including first and second access nMOS transistors, first and second driver nMOS transistors and first and second load pMOS transistors, polysilicon wires forming gates of the first and second access nMOS transistors and polysilicon wires extending in the same direction as the polysilicon wires for forming gates of the first and second driver nMOS transistors and gates of the first and second load pMOS transistors. The gate widths of the first and second access nMOS transistors and those of the first and second driver nMOS transistors are equalized with each other.